Paper Title:
Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films
  Abstract

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

  Info
Periodical
Edited by
Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki
Pages
133-136
DOI
10.4028/www.scientific.net/KEM.485.133
Citation
R. Saotome, N. Wakiya, T. Kiguchi, J. S. Cross, O. Sakurai, K. Shinozaki, "Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films", Key Engineering Materials, Vol. 485, pp. 133-136, 2011
Online since
July 2011
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