Paper Title:
Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range
  Abstract

The resistivity of transparent conductive thin film formed by sputtering exhibits a dependence on film thickness. In this study, an analysis by electromagnetic field simulation of resistance effect on the transmission characteristics was carried out. The overall resistance of the signal waveguide governs the transmission characteristics, and variation of the resistance at the interface between the substrate and the thin film has no significant effect. We evaluated a structure in which fine metal wiring that is not visible to the eye is placed on transparent conductors to reduce the resistance of the transmitting waveguide. Electromagnetic field simulations suggest that this structure improves the transmission characteristics while keeping high transparency.

  Info
Periodical
Edited by
Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki
Pages
207-210
DOI
10.4028/www.scientific.net/KEM.485.207
Citation
T. Ogino, N. Ohashi, S. Hishita, I. Sakaguchi, Y. Adachi, K. Nakajima, H. Haneda, "Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range", Key Engineering Materials, Vol. 485, pp. 207-210, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Makito Nakano, Akira Saito, Nobuyuki Wada
Abstract:The factors causing a decrease in the resistivity of multilayer ceramic capacitors (MLCCs) with a decrease in the thickness of dielectric...
277
Authors: Tetsuo Hatakeyama, Kenji Fukuda, Hajime Okumura
Chapter 6: SiC Devices, Circuits and Systems
Abstract:The impact of device concepts of Si insulated gate bipolar transistors (IGBTs) such as injection-enhanced IGBT (IEGT), high-conductivity IGBT...
1143
Authors: Koji Nakayama, Atsushi Tanaka, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
Chapter 6: SiC Devices, Circuits and Systems
Abstract:The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick...
989
Authors: Bei Jia He, Xin Yi Chen, Jian Bo Wang, Jun Lu, Jian Chang, Dong Liu
Chapter 1: Advanced Engineering Materials
Abstract:To expand the bandgap's width of the one-dimensional photonic crystal, a crystal named SiO2/Metal/MgF2 is formed by...
679
Authors: Chang Ting Chen
Chapter 5: Electrical and Electronic Instruments and Equipment
Abstract:A novel V-shaped microstrip meander-line slow-wave structure was investigated to expand the operating bandwidth. The high frequency...
698