Paper Title:
Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure
  Abstract

High-performance single crystals of ferroelectric Bi4Ti3O12 (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po2) atmosphere. Crystals grown at 960°C at a Po2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 mC/cm2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d11* of 37 pm/V for BiT.

  Info
Periodical
Edited by
Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki
Pages
73-76
DOI
10.4028/www.scientific.net/KEM.485.73
Citation
Y. Kitanaka, Y. Noguchi, M. Miyayama, "Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure", Key Engineering Materials, Vol. 485, pp. 73-76, 2011
Online since
July 2011
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