Paper Title:
Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films
  Abstract

Dy2O3-doped bismuth titanate (Bi4-xDyxTi3O12: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (Pr) and coercive field (Ec) of the BDT Film with x = 0.8 were 20 μC/cm2 and 60 KV/cm, respectively. After 3 × 1010 switching cycles, 20% degradation of Pr is observed in the film.

  Info
Periodical
Edited by
Yiwang Bao, Danyu Jiang, Li Tian and Jianghong Gong
Pages
206-209
DOI
10.4028/www.scientific.net/KEM.492.206
Citation
M. Chen, X.A. Mei, A.H. Cai, J. Liu, C. Q. Huang, "Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vol. 492, pp. 206-209, 2012
Online since
September 2011
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