Paper Title:
PVD of N-CuIn3Se5 Photoabsorber Films
  Abstract

Thin films of Cu-In-Se (CISe) photoabsorber with overall composition of CuIn3Se5 were deposited onto glass/ITO substrates by using physical vapour deposition (PVD) technique. Thermal conditions for the substrates during deposition process and following thermal annealing were selected with the purpose to prepare polycrystalline n-CuIn3Se5 photoabsorber layers for the hybrid photovoltaic structures based on inorganic photoabsorber and conductive polymer functional layers. It was found, that the CISe layers deposited at the temperature of substrate of 200 °C and annealed at the temperature range of 450-500 oC in vacuum and double annealed in argon and vacuum at 500 oC demonstrate high photosensitivity and photoconductivity under white light illumination of 100 mW/cm2 intensity. Obtained results show the chalcopyrite structure of prepared photoabsorber films with good adhesion to the glass/ITO substrate.

  Info
Periodical
Edited by
E. Hristoforou and D.S. Vlachos
Pages
339-342
DOI
10.4028/www.scientific.net/KEM.495.339
Citation
N. Adhikari, S. Bereznev, J. Kois, O. Volobujeva, T. Raadik, R. Traksmaa, A. Tverjanovich, A. Öpik, "PVD of N-CuIn3Se5 Photoabsorber Films", Key Engineering Materials, Vol. 495, pp. 339-342, 2012
Online since
November 2011
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