Paper Title:
Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study
  Abstract

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

  Info
Periodical
Edited by
Michael N. Morgan, Andrew Shaw and Otar Mgaloblishvili
Pages
150-155
DOI
10.4028/www.scientific.net/KEM.496.150
Citation
S. Goel, X. C. Luo, R.L. Reuben, W. Bin Rashid, J. N. Sun, "Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study", Key Engineering Materials, Vol. 496, pp. 150-155, 2012
Online since
December 2011
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