Paper Title:
Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories
  Abstract

Performance of lateral phase change memories (LPCMs) is investigated by both electrical characterization and finite element analysis. Ge2Sb2Te5 lateral PCMs (GST-LPCMs) exhibit a low reset current but a bad endurance. By replacing GST with Sb2Te3 (ST) and adding a TiN layer between ST and electrodes, the ST-TiN-LPCMs are demonstrated to have a much improved endurance. Finite element analysis of the LPCMs with electric-thermal structural interaction shows that thermal confinement makes GST-LPCMs low-power consumptive but that high level stress makes them readily broken. In contrast, ST-TiN-LPCMs experience low level stress during operation but high power consumption is required.

  Info
Periodical
Chapter
Chapter 3: Nano-Science and Technology
Edited by
Osamu Hanaizumi, Masafumi Unno and Kenta Miura
Pages
106-110
DOI
10.4028/www.scientific.net/KEM.497.106
Citation
Y. Yin, S. Hosaka, "Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories", Key Engineering Materials, Vol. 497, pp. 106-110, 2012
Online since
December 2011
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Price
$32.00
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