We have investigated random-access multilevel storage in phase change memory by staircase-like pulse programming. Staircase-like pulse consists of first sub-pulse and second sub-pulse. Our simulation exhibited that any resistance levels are expected to be randomly accessed by controlling the crystallization with different widths of second sub-pulse t2. Based on the simulation results, we did experiment on staircase-like pulse programming. Experimental results showed that the device resistance gradually increased with reducing second sub-pulse t2 to 0 ns. In other words, random access to any resistance levels was demonstrated to be possible simply by changing t2.