Paper Title:
Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming
  Abstract

We have investigated random-access multilevel storage in phase change memory by staircase-like pulse programming. Staircase-like pulse consists of first sub-pulse and second sub-pulse. Our simulation exhibited that any resistance levels are expected to be randomly accessed by controlling the crystallization with different widths of second sub-pulse t2. Based on the simulation results, we did experiment on staircase-like pulse programming. Experimental results showed that the device resistance gradually increased with reducing second sub-pulse t2 to 0 ns. In other words, random access to any resistance levels was demonstrated to be possible simply by changing t2.

  Info
Periodical
Chapter
Chapter 3: Nano-Science and Technology
Edited by
Osamu Hanaizumi, Masafumi Unno and Kenta Miura
Pages
111-115
DOI
10.4028/www.scientific.net/KEM.497.111
Citation
R. Kobayashi, T. Noguchi, Y. Yin, S. Hosaka, "Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming", Key Engineering Materials, Vol. 497, pp. 111-115, 2012
Online since
December 2011
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Price
$35.00
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