Paper Title:
Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors
  Abstract

An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb:Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.

  Info
Periodical
Chapter
Chapter 1: Material Engineering and Technology
Edited by
David Wang
Pages
66-69
DOI
10.4028/www.scientific.net/KEM.500.66
Citation
H. Dezaki, M. L. Jing, S. Balasekaran, T. Tanabe, Y. Oyama, "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors", Key Engineering Materials, Vol. 500, pp. 66-69, 2012
Online since
January 2012
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Li Qiong An, Jian Zhang, Min Liu, Sheng Wu Wang
Abstract:Yb3+ and Ho3+ co-doped Lu2O3 nanocrystalline powders were synthesized by a reversestrike co-precipitation method. The as-prepared powders...
521
Authors: Xu Li, Li Guan, Chong Liu, Feng Cong, Zhi Ping Yang
Abstract:In this study, a novel green phosphor Ca2SrAl2O6:Ce3+,Tb3+ were prepared by solid state method. The crystal structure and particle morphology...
1823
Authors: Xiao Song Zhang, Gao Feng Zhang, Qing Song Huang, Feng Wei Wei, Yong Liang Zhou
Abstract:ZnS:Mn Quantum dots (QDs) excess of [S2-] were synthesized by the wet chemical precipitation method with an average diameter of 3.9 nm....
572
Authors: Li Qun Cheng, Guang Cheng, Rui Dong, Xi Yan Zhang
New Functional Materials
Abstract:Yb3+and Er3+ co-doped BaF2 phosphors were prepared by high temperature solid reaction method. Effects of mol...
490
Authors: Chun Ping Li, Li Zhang, Chang Jie Liu, Ge Gao
Chapter 3: Electronic Materials
Abstract:High yield ZnO nanorods are synthesized by a simple wet chemical method. The crystal morphology and structure of the ZnO nanorods are...
161