Thermal Conductivity of Amorphous and Crystalline SiO2 Nano-Films from Molecular Dynamics Simulations
| Periodical | Key Engineering Materials (Volume 501) |
|---|---|
| Main Theme | Progress in Polymer Processing |
| Edited by | Chi Zhang |
| Pages | 64-69 |
| DOI | 10.4028/www.scientific.net/KEM.501.64 |
| Citation | Yan He et al., 2012, Key Engineering Materials, 501, 64 |
| Online since | January, 2012 |
| Authors | Yan He, Yuan Zheng Tang, Man Ding, Lian Xiang Ma |
| Keywords | Amorphous SiO2, Crystalline SiO2, Molecular Dynamics (MD), Nano-Films, Thermal Conductivity (TC) |
| Price | US$ 28,- |
Normal thermal conductivity of amorphous and crystalline SiO2 nano-films is calculated by nonequilibrium molecular dynamics (NEMD) simulations in the temperature range from 100 to 700K and thicknesses from 2 to 6nm. The calculated temperature and thickness dependences of thermal conductivity are in good agreement with previous literatures. In the same thickness, higher thermal conductivity is obtained for crystalline SiO2 nano-films. And more importantly, for amorphous SiO2 nano-films, thickness can be any direction of x, y, z-axis without effect on the normal thermal conductivity, for crystalline SiO2 nano-films, the different thickness directions obtain different thermal conductivity results. The different results of amorphous and crystalline SiO2 nano-films simply show that film thickness and grain morphology will cause different effects on thermal conductivity.
