Paper Title:

Phase Transition Characterization Dependent on Temperature and DC Electric Field for (Pb, La) (Zr, Ti)O3 Antiferroelectric Thick Films

Periodical Key Engineering Materials (Volume 503)
Main Theme Micro-Nano Technology XIII
Chapter Chapter 1: Micro/Nano Transducer/Acutar/Robot
Edited by Xiaohao Wang
Pages 97-102
DOI 10.4028/
Citation Xiu Jian Chou et al., 2012, Key Engineering Materials, 503, 97
Online since February, 2012
Authors Xiu Jian Chou, Miao Xuan Du, Yong Bo Lv, Jun Liu, Wen Dong Zhang
Keywords Antiferroelectric Thick Film, Electric Field, Phase Transition, Temperature
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Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature of the films was confirmed by the double hysteresis behaviors versus applied field. The temperature dependence of dielectric constant and loss displayed the Curie temperature was 225oC.The current caused by the polarization and depolarization of polar was detected at coupling application of electric field and temperature. The phase transition characterization could be effectively adjusted by electric field and temperature.

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