Paper Title:
Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers
| Periodical | Key Engineering Materials (Volume 508) |
|---|---|
| Main Theme | Materials Integration |
| Edited by | Takashi Goto, Zhengyi Fu and Lianmeng Zhang |
| Pages | 189-192 |
| DOI | 10.4028/www.scientific.net/KEM.508.189 |
| Citation | L. Li et al., 2012, Key Engineering Materials, 508, 189 |
| Online since | March, 2012 |
| Authors | L. Li, Chuan Bin Wang, Qiang Shen, Lian Meng Zhang |
| Keywords | BaTi2O5 Film, b-Axis Orientation, MgO Buffers, Pulsed Laser Deposition (PLD) |
| Price | US$ 28,- |
View full size
Abstract
Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi2O5 Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (PO2). the Effects of PO2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at PO2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing PO2. at PO2 = 10 Pa, the BaTi2O5 Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi2O5 Films on Si Substrates.
