Paper Title:

Interface Reaction Behavior between Mn and SiO2 Formed by RF Sputter Deposition

Periodical Key Engineering Materials (Volume 508)
Main Theme Materials Integration
Edited by Takashi Goto, Zhengyi Fu and Lianmeng Zhang
Pages 48-51
DOI 10.4028/www.scientific.net/KEM.508.48
Citation Byeong Taek Bae et al., 2012, Key Engineering Materials, 508, 48
Online since March, 2012
Authors Byeong Taek Bae, Hideaki Nakano, Junichi Koike
Keywords Electric Field, Interface Reaction, Mn, SiO2, TEM
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Abstract

The Present Work Investigated the Effects of Adsorbed Moisture in Substrates on the Growth of a Self-Forming Barrier Layer between Mn and SiO2. In Order to Control the Adsorbed Moisture, the Substrates of TEOS-SiO2/Si Were Pre-Annealed in Vacuum at Various Temperatures. Then, Mn Thin Films Were Deposited on the Substrate with or without Pre-Annealing. The Results of Interface Reaction after Additional Post-Annealing Indicated that an Interface Reaction Layer Becomes Thinner with Decreasing the Adsorbed Moisture in the SiO2 Substrates.