Interface Reaction Behavior between Mn and SiO2 Formed by RF Sputter Deposition
| Periodical | Key Engineering Materials (Volume 508) |
|---|---|
| Main Theme | Materials Integration |
| Edited by | Takashi Goto, Zhengyi Fu and Lianmeng Zhang |
| Pages | 48-51 |
| DOI | 10.4028/www.scientific.net/KEM.508.48 |
| Citation | Byeong Taek Bae et al., 2012, Key Engineering Materials, 508, 48 |
| Online since | March, 2012 |
| Authors | Byeong Taek Bae, Hideaki Nakano, Junichi Koike |
| Keywords | Electric Field, Interface Reaction, Mn, SiO2, TEM |
| Price | US$ 28,- |
The Present Work Investigated the Effects of Adsorbed Moisture in Substrates on the Growth of a Self-Forming Barrier Layer between Mn and SiO2. In Order to Control the Adsorbed Moisture, the Substrates of TEOS-SiO2/Si Were Pre-Annealed in Vacuum at Various Temperatures. Then, Mn Thin Films Were Deposited on the Substrate with or without Pre-Annealing. The Results of Interface Reaction after Additional Post-Annealing Indicated that an Interface Reaction Layer Becomes Thinner with Decreasing the Adsorbed Moisture in the SiO2 Substrates.