Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization
| Periodical | Key Engineering Materials (Volume 508) |
|---|---|
| Main Theme | Materials Integration |
| Edited by | Takashi Goto, Zhengyi Fu and Lianmeng Zhang |
| Pages | 7-10 |
| DOI | 10.4028/www.scientific.net/KEM.508.7 |
| Citation | M.S. Lebedev, 2012, Key Engineering Materials, 508, 7 |
| Online since | March, 2012 |
| Authors | M.S. Lebedev |
| Keywords | Carbon Clusters, Ellipsometry, Interface, MOCVD, Thin Film |
| Price | US$ 28,- |
Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon Nanotubes Transistors. MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques of HfO2, Al2O3 and (Al2O3)x(HfO2)1-X Thin Films Were Applied Using Metal-Organic Substances as the Precursors. Dependences of Growth Rates on Process Parameters Were Studied. The Chemical Structure and Properties of the Films and Electrophysical Characteristics of the Test Structures Were Investigated.