Paper Title:

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization

Periodical Key Engineering Materials (Volume 508)
Main Theme Materials Integration
Edited by Takashi Goto, Zhengyi Fu and Lianmeng Zhang
Pages 7-10
DOI 10.4028/www.scientific.net/KEM.508.7
Citation M.S. Lebedev, 2012, Key Engineering Materials, 508, 7
Online since March, 2012
Authors M.S. Lebedev
Keywords Carbon Clusters, Ellipsometry, Interface, MOCVD, Thin Film
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Abstract

Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon Nanotubes Transistors. MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques of HfO2, Al2O3 and (Al2O3)x(HfO2)1-X Thin Films Were Applied Using Metal-Organic Substances as the Precursors. Dependences of Growth Rates on Process Parameters Were Studied. The Chemical Structure and Properties of the Films and Electrophysical Characteristics of the Test Structures Were Investigated.