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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p1 Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology   [ 349 K ]
  Authors: Shintaro Miyazawa
• p9 Hot Topics: Theory   [ 441 K ]
  Authors: A.M. Stoneham
• p19 AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors   [ 220 K ]
  Authors: Y. Bar-Yam, J.D. Joannopoulos
• p25 Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities   [ 265 K ]
  Authors: C.M. Weinert, Matthias Scheffler
• p31 Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods   [ 287 K ]
  Authors: Gary G. DeLeo, W. Beall Fowler, Geralyn W. Barry, Morgan Besson
• p37 Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs   [ 142 K ]
  Authors: Christian Delerue, G. Allan, Michel Lannoo
• p43 Tight-Binding Study of the Silicon Divacancy   [ 266 K ]
  Authors: P. Pecheur, G. Toussaint
• p49 Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe   [ 261 K ]
  Authors: Hélio Chacham, J. Luís Alves, M.L. de Siqueira
• p55 Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon   [ 240 K ]
  Authors: Lucy V.C. Assali, J.R. Leite
• p61 Calculation of the Spin-Polarized Electronic Structure of Si: Fe^o_i in Super-Cell Full-Potential Linearized Augumented Plane Wave Method   [ 268 K ]
  Authors: Hiroshi Katayama-Yoshida, N. Hamada
• p67 Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors   [ 137 K ]
  Authors: J. Petit, G. Allan, Michel Lannoo
• p73 Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials   [ 248 K ]
  Authors: Vitor J.B. Torres, Pierre M. Masri, A.M. Stoneham
• p79 Effects of Doping and Alloying on Native Defects and Complex Formation in Hg_1-x Cd_xTe   [ 302 K ]
  Authors: C.G. Morgan-Pond
• p85 The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide   [ 279 K ]
  Authors: L.A. Hemstreet
• p91 Defect Calculations in a Modified Haldane-Anderson Model   [ 214 K ]
  Authors: W. Beall Fowler