Paper Title:
Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1003-1008
DOI
10.4028/www.scientific.net/MSF.10-12.1003
Citation
S. Matsumoto, H. Kaneko, T. Sasao, "Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon", Materials Science Forum, Vols. 10-12, pp. 1003-1008, 1986
Online since
January 1986
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Price
$32.00
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