Paper Title:
A Model for the Density of Oxidation Induced Stacking Faults in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1015-1020
DOI
10.4028/www.scientific.net/MSF.10-12.1015
Citation
F.G. Kuper, J. T.M. de Hosson, J.F. Verwey, "A Model for the Density of Oxidation Induced Stacking Faults in Silicon", Materials Science Forum, Vols. 10-12, pp. 1015-1020, 1986
Online since
January 1986
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Price
$32.00
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