High Temperature Investigations of Silicon by Means of Positron Annihilation |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
|---|---|
| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 103-113 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.103 |
| Citation | S. Dannefaer, 1986, Materials Science Forum, 10-12, 103 |
| Authors | S. Dannefaer |
| Full Paper | 
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