Paper Title:
Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet
  Abstract

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Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1039-1044
DOI
10.4028/www.scientific.net/MSF.10-12.1039
Citation
F. M. Wu, Q. J. Lai, L. Xu, B. R. Gong, X. M. Zhou, "Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet", Materials Science Forum, Vols. 10-12, pp. 1039-1044, 1986
Online since
January 1986
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