Paper Title:
Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1087-1092
DOI
10.4028/www.scientific.net/MSF.10-12.1087
Citation
B. G. Svensson, J. L. Lindström, "Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon", Materials Science Forum, Vols. 10-12, pp. 1087-1092, 1986
Online since
January 1986
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Price
$32.00
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