Paper Title:
Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1135-1140
DOI
10.4028/www.scientific.net/MSF.10-12.1135
Citation
G. Weyer, A. Nylandsted-Larsen, F.T. Pedersen, R. Galloni, R. Rizzoli, "Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon", Materials Science Forum, Vols. 10-12, pp. 1135-1140, 1986
Online since
January 1986
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Price
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