Paper Title:
Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1159-1164
DOI
10.4028/www.scientific.net/MSF.10-12.1159
Citation
A. Hobbs, R.C. Barklie, K.J. Reeson, P.L.F. Hemment, "Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation", Materials Science Forum, Vols. 10-12, pp. 1159-1164, 1986
Online since
January 1986
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