Paper Title:
As-Implanted Lattice Sites of Dopants in Semiconductors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
1183-1188
DOI
10.4028/www.scientific.net/MSF.10-12.1183
Citation
H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel, G. Weyer, J.W. Petersen, "As-Implanted Lattice Sites of Dopants in Semiconductors", Materials Science Forum, Vols. 10-12, pp. 1183-1188, 1986
Online since
January 1986
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Price
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