Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
|---|---|
| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 1213-1218 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.1213 |
| Citation | C. Ghezzi et al., 1986, Materials Science Forum, 10-12, 1213 |
| Authors | C. Ghezzi, E. Gombia, L. Vanzetti |
| Full Paper | 
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