Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs

Journal Materials Science Forum (Volumes 10 - 12)
Volume Defects in Semiconductors 14
Edited by H.J. von Bardeleben
Pages 1229-1234
DOI 10.4028/www.scientific.net/MSF.10-12.1229
Citation P. Bunod et al., 1986, Materials Science Forum, 10-12, 1229
Authors P. Bunod, E. Molva, A. Chabli, F. Bertin, J. Blétry, Le Si Dang
Full Paper PDF Get the full paper by clicking here

First page example

Preview of first page