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Radiative Recombination Mechanism of Deep Levels in GaAs

Journal Materials Science Forum (Volumes 10 - 12)
Volume Defects in Semiconductors 14
Edited by H.J. von Bardeleben
Pages 1265-0
DOI 10.4028/www.scientific.net/MSF.10-12.1265
Citation Michio Tajima et al., 1986, Materials Science Forum, 10-12, 1265
Authors Michio Tajima, Hiroshi Tanino, Koichi Ishida
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