Germanium Impurity Diffusion in Boron Doped Silicon |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
|---|---|
| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 127-132 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.127 |
| Citation | A.L. Bouchetout et al., 1986, Materials Science Forum, 10-12, 127 |
| Authors | A.L. Bouchetout, N. Tabet, Claude J.A. Monty |
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