Paper Title:
Germanium Impurity Diffusion in Boron Doped Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
127-132
DOI
10.4028/www.scientific.net/MSF.10-12.127
Citation
A.L. Bouchetout, N. Tabet, C. J.A. Monty, "Germanium Impurity Diffusion in Boron Doped Silicon", Materials Science Forum, Vols. 10-12, pp. 127-132, 1986
Online since
January 1986
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Price
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