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Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena

Journal Materials Science Forum (Volumes 10 - 12)
Volume Defects in Semiconductors 14
Edited by H.J. von Bardeleben
Pages 157-162
DOI 10.4028/www.scientific.net/MSF.10-12.157
Citation D. Mathiot, 1986, Materials Science Forum, 10-12, 157
Authors D. Mathiot
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