Paper Title:
Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
157-162
DOI
10.4028/www.scientific.net/MSF.10-12.157
Citation
D. Mathiot, "Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena", Materials Science Forum, Vols. 10-12, pp. 157-162, 1986
Online since
January 1986
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Price
$32.00
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