Migration of Interstitial Boron in Silicon |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
|---|---|
| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 163-168 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.163 |
| Citation | R.D. Harris et al., 1986, Materials Science Forum, 10-12, 163 |
| Authors | R.D. Harris, G.D. Watkins, Lionel C. Kimerling |
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