Paper Title:
Migration of Interstitial Boron in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
163-168
DOI
10.4028/www.scientific.net/MSF.10-12.163
Citation
R.D. Harris, G.D. Watkins, L. C. Kimerling, "Migration of Interstitial Boron in Silicon", Materials Science Forum, Vols. 10-12, pp. 163-168, 1986
Online since
January 1986
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Price
$32.00
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