Paper Title:
Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
205-210
DOI
10.4028/www.scientific.net/MSF.10-12.205
Citation
F.A. Ponce, D.K. Biegelsen, J.C. Tramontana, A.J. Smith, "Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE", Materials Science Forum, Vols. 10-12, pp. 205-210, 1986
Online since
January 1986
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Price
$32.00
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