Paper Title:
Charged Defect States at Silicon Grain Boundaries
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
229-234
DOI
10.4028/www.scientific.net/MSF.10-12.229
Citation
F.J. Stützler, L. Tapfer, H.J. Queisser, "Charged Defect States at Silicon Grain Boundaries", Materials Science Forum, Vols. 10-12, pp. 229-234, 1986
Online since
January 1986
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Price
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