Paper Title:
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
335-340
DOI
10.4028/www.scientific.net/MSF.10-12.335
Citation
M. Lopez, E. Abril, B. Jimenez, M. Aguilar, E. Muñoz Merino, "EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers", Materials Science Forum, Vols. 10-12, pp. 335-340, 1986
Online since
January 1986
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Price
$32.00
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