Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
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| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 37-41 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.37 |
| Citation | Christian Delerue et al., 1986, Materials Science Forum, 10-12, 37 |
| Authors | Christian Delerue, G. Allan, Michel Lannoo |
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