Paper Title:
Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
37-41
DOI
10.4028/www.scientific.net/MSF.10-12.37
Citation
C. Delerue, G. Allan, M. Lannoo, "Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs", Materials Science Forum, Vols. 10-12, pp. 37-41, 1986
Online since
January 1986
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