Paper Title:
The Ge-Related DX Level in Sn/Ge-Doped AlxGa1-xAs Hetero-Junctions Grown by LPE
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
423-428
DOI
10.4028/www.scientific.net/MSF.10-12.423
Citation
P. Krispin, J. Maege, "The Ge-Related DX Level in Sn/Ge-Doped AlxGa1-xAs Hetero-Junctions Grown by LPE", Materials Science Forum, Vols. 10-12, pp. 423-428, 1986
Online since
January 1986
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Price
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