Paper Title:
On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
463-468
DOI
10.4028/www.scientific.net/MSF.10-12.463
Citation
P.A. Murawala, D. Stiévenard, J.C. Bourgoin, M. Lannoo, "On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs", Materials Science Forum, Vols. 10-12, pp. 463-468, 1986
Online since
January 1986
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.