Paper Title:
Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
527-532
DOI
10.4028/www.scientific.net/MSF.10-12.527
Citation
P. J. Hautojärvi, H. Huomo, J. Lahtinen, J. Mäkinen, "Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam", Materials Science Forum, Vols. 10-12, pp. 527-532, 1986
Online since
January 1986
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Price
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