Paper Title:
Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
539-544
DOI
10.4028/www.scientific.net/MSF.10-12.539
Citation
J. Samitier, J.R. Morante, A. Cornet, A. Herms, P. Roura, A. Pérez-Rodríguez, "Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs", Materials Science Forum, Vols. 10-12, pp. 539-544, 1986
Online since
January 1986
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.