Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
|---|---|
| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 55-60 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.55 |
| Citation | Lucy V.C. Assali et al., 1986, Materials Science Forum, 10-12, 55 |
| Authors | Lucy V.C. Assali, J.R. Leite |
| Full Paper | 
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