Paper Title:
Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
55-60
DOI
10.4028/www.scientific.net/MSF.10-12.55
Citation
L. V.C. Assali, J.R. Leite, "Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon", Materials Science Forum, Vols. 10-12, pp. 55-60, 1986
Online since
January 1986
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Price
$32.00
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