Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method |
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| Journal | Materials Science Forum (Volumes 10 - 12) |
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| Volume | Defects in Semiconductors 14 |
| Edited by | H.J. von Bardeleben |
| Pages | 61-66 |
| DOI | 10.4028/www.scientific.net/MSF.10-12.61 |
| Citation | Hiroshi Katayama-Yoshida et al., 1986, Materials Science Forum, 10-12, 61 |
| Authors | Hiroshi Katayama-Yoshida, N. Hamada |
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