Paper Title:
The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
751-756
DOI
10.4028/www.scientific.net/MSF.10-12.751
Citation
K. S. Jones, S. Prussin, E. R. Weber, "The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon", Materials Science Forum, Vols. 10-12, pp. 751-756, 1986
Online since
January 1986
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Price
$32.00
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