Paper Title:
Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
781-786
DOI
10.4028/www.scientific.net/MSF.10-12.781
Citation
P. Boivin, J. Rabier, H. Garem, "Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping", Materials Science Forum, Vols. 10-12, pp. 781-786, 1986
Online since
January 1986
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Price
$32.00
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