Paper Title:
On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs
  Abstract

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Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
821-826
DOI
10.4028/www.scientific.net/MSF.10-12.821
Citation
Y. Androussi, P. François, J. Di Persio, G. Vanderschaeve, A. Lefebvre, "On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs", Materials Science Forum, Vols. 10-12, pp. 821-826, 1986
Online since
January 1986
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