Paper Title:
N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon
  Abstract

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Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
899-904
DOI
10.4028/www.scientific.net/MSF.10-12.899
Citation
H. Itoh, K. Murakami, K. Takita, K. Masuda, "N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon", Materials Science Forum, Vols. 10-12, pp. 899-904, 1986
Online since
January 1986
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