Paper Title:
Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
905-910
DOI
10.4028/www.scientific.net/MSF.10-12.905
Citation
V.M.S. Gomes, J.R. Leite, "Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon", Materials Science Forum, Vols. 10-12, pp. 905-910, 1986
Online since
January 1986
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Price
$32.00
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