Paper Title:
Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 10-12)
Edited by
H.J. von Bardeleben
Pages
973-978
DOI
10.4028/www.scientific.net/MSF.10-12.973
Citation
S.K. Hahn, S. Shatas, H.J. Stein, M. Arst, D.K. Sadana, Z.U. Rek, V. Stojanoff, "Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers ", Materials Science Forum, Vols. 10-12, pp. 973-978, 1986
Online since
January 1986
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