Paper Title:
Diagnostics of Radiation Defects in Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
1021-1024
DOI
10.4028/www.scientific.net/MSF.105-110.1021
Citation
A.I. Girka, A.D. Mokrushin, E.N. Mokhov, S.V. Svirida, A.V. Shishkin, "Diagnostics of Radiation Defects in Silicon Carbide", Materials Science Forum, Vols. 105-110, pp. 1021-1024, 1992
Online since
January 1992
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Price
$32.00
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