Paper Title:
Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
1085-1088
DOI
10.4028/www.scientific.net/MSF.105-110.1085
Citation
Y. Itoh, H. Murakami, T. Suzuki, "Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation", Materials Science Forum, Vols. 105-110, pp. 1085-1088, 1992
Online since
January 1992
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.