Paper Title:

Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation

Periodical Materials Science Forum (Volumes 105 - 110)
Main Theme Positron Annihilation - ICPA-9
Edited by Zs. Kajcsos and Cs. Szeles
Pages 1085-1088
DOI 10.4028/www.scientific.net/MSF.105-110.1085
Citation Yoshiko Itoh et al., 1992, Materials Science Forum, 105-110, 1085
Authors Yoshiko Itoh, Hideoki Murakami, T. Suzuki
Keywords GaAs, Proton Irradiation, Vacancy Type Defects
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