Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation
| Periodical | Materials Science Forum (Volumes 105 - 110) |
|---|---|
| Main Theme | Positron Annihilation - ICPA-9 |
| Edited by | Zs. Kajcsos and Cs. Szeles |
| Pages | 1085-1088 |
| DOI | 10.4028/www.scientific.net/MSF.105-110.1085 |
| Citation | Yoshiko Itoh et al., 1992, Materials Science Forum, 105-110, 1085 |
| Authors | Yoshiko Itoh, Hideoki Murakami, T. Suzuki |
| Keywords | GaAs, Proton Irradiation, Vacancy Type Defects |
| Price | US$ 28,- |