Paper Title:
Thermal Evolution of Defect Profiles in H-Implanted Silicon Studied by Slow Positrons
  Abstract

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Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
1367-1370
DOI
10.4028/www.scientific.net/MSF.105-110.1367
Citation
R. S. Brusa, M. Duarte Naia, A. Dupasquier, G. Ottaviani, R. Tonini, A. Zecca, "Thermal Evolution of Defect Profiles in H-Implanted Silicon Studied by Slow Positrons", Materials Science Forum, Vols. 105-110, pp. 1367-1370, 1992
Online since
January 1992
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Price
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