Paper Title:
Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
1439-1442
DOI
10.4028/www.scientific.net/MSF.105-110.1439
Citation
P.J. Simpson, M. Vos, I.V. Mitchell, C. Wu, P.J. Schultz, "Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption ", Materials Science Forum, Vols. 105-110, pp. 1439-1442, 1992
Online since
January 1992
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