Paper Title:

Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption

Periodical Materials Science Forum (Volumes 105 - 110)
Main Theme Positron Annihilation - ICPA-9
Edited by Zs. Kajcsos and Cs. Szeles
Pages 1439-1442
DOI 10.4028/www.scientific.net/MSF.105-110.1439
Citation P.J. Simpson et al., 1992, Materials Science Forum, 105-110, 1439
Authors P.J. Simpson, M. Vos, I.V. Mitchell, C. Wu, P.J. Schultz
Keywords Defect Profiling, Infrared Adsorption, Ion Implantation, Radiation Damage, Rutherford Backscattering, Silicon
Price US$ 28,-
Article Preview
View full size