Paper Title:
Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption
| Periodical |
Materials Science Forum (Volumes 105 - 110)
|
| Main Theme |
Positron Annihilation - ICPA-9
|
| Edited by |
Zs. Kajcsos and Cs. Szeles |
| Pages |
1439-1442 |
| DOI |
10.4028/www.scientific.net/MSF.105-110.1439 |
| Citation |
P.J. Simpson et al., 1992, Materials Science Forum, 105-110, 1439 |
| Authors |
P.J. Simpson, M. Vos, I.V. Mitchell, C. Wu, P.J. Schultz |
| Keywords |
Defect Profiling, Infrared Adsorption, Ion Implantation, Radiation Damage, Rutherford Backscattering, Silicon |
| Price |
US$ 28,- |