Paper Title:
Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons
  Abstract

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Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
1487-1490
DOI
10.4028/www.scientific.net/MSF.105-110.1487
Citation
L. Wei, J.L. Lee, S. Tanigawa, M. Kawabe, "Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons ", Materials Science Forum, Vols. 105-110, pp. 1487-1490, 1992
Online since
January 1992
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Price
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